Issued Patents 2019
Showing 1–4 of 4 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10388747 | Gate contact structure positioned above an active region with air gaps positioned adjacent the gate structure | Ruilong Xie, Emilie Bourjot, Laertis Economikos | 2019-08-20 |
| 10388770 | Gate and source/drain contact structures positioned above an active region of a transistor device | Ruilong Xie, Chanro Park | 2019-08-20 |
| 10290738 | Methods of forming epi semiconductor material on a recessed fin in the source/drain regions of a FinFET device | Ruilong Xie, Kwan-Yong Lim | 2019-05-14 |
| 10170544 | Integrated circuit products that include FinFET devices and a protection layer formed on an isolation region | Ruilong Xie, Min Gyu Sung, Tek Po Rinus Lee | 2019-01-01 |