Issued Patents 2019
Showing 1–1 of 1 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10262863 | Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a CI-based gas, and SiC epitaxial growth apparatus | Keisuke Fukada, Masahiko Ito, Isaho Kamata, Hidekazu Tsuchida, Hideyuki Uehigashi +4 more | 2019-04-16 |