Issued Patents 2019
Showing 1–5 of 5 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10522667 | Silicon carbide epitaxial wafer, silicon carbide insulated gate bipolar transistor, and method of manufacturing the same | Takeshi Tawara, Koichi Murata | 2019-12-31 |
| 10453924 | Silicon carbide semiconductor substrate, method of manufacturing silicon carbide semiconductor substrate, semiconductor device and method of manufacturing semiconductor device | Takeshi Tawara, Tetsuya Miyazawa | 2019-10-22 |
| 10354867 | Epitaxial wafer manufacturing method, epitaxial wafer, semiconductor device manufacturing method, and semiconductor device | Tetsuya Miyazawa, Yoshiyuki Yonezawa, Tomohisa Kato, Kazutoshi Kojima, Takeshi Tawara +1 more | 2019-07-16 |
| 10262863 | Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a CI-based gas, and SiC epitaxial growth apparatus | Keisuke Fukada, Masahiko Ito, Isaho Kamata, Hideyuki Uehigashi, Hiroaki Fujibayashi +4 more | 2019-04-16 |
| 10181517 | Silicon carbide single crystal, silicon carbide single crystal wafer, silicon carbide single crystal epitaxial wafer, and electronic device | Takeshi Okamoto, Hiroyuki Kondo, Takashi Kanemura, Shinichiro Miyahara, Yasuhiro Ebihara +3 more | 2019-01-15 |