Issued Patents 2019
Showing 1–2 of 2 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10262863 | Method for manufacturing SiC epitaxial wafer by simultaneously utilizing an N-based gas and a CI-based gas, and SiC epitaxial growth apparatus | Keisuke Fukada, Masahiko Ito, Hidekazu Tsuchida, Hideyuki Uehigashi, Hiroaki Fujibayashi +4 more | 2019-04-16 |
| 10181517 | Silicon carbide single crystal, silicon carbide single crystal wafer, silicon carbide single crystal epitaxial wafer, and electronic device | Takeshi Okamoto, Hiroyuki Kondo, Takashi Kanemura, Shinichiro Miyahara, Yasuhiro Ebihara +3 more | 2019-01-15 |