Issued Patents 2018
Showing 26–50 of 55 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9984938 | Integrate circuit with nanowires | Jiun-Jia Huang | 2018-05-29 |
| 9978863 | Semiconductor arrangement with one or more semiconductor columns | Jean-Pierre Colinge, Ta-Pen Guo, Carlos H. Diaz | 2018-05-22 |
| 9978853 | Method of forming gate structure of a semiconductor device | Ming Zhu, Hui-Wen Lin, Harry-Hak-Lay Chuang, Bao-Ru Young, Yuan-Sheng Huang +4 more | 2018-05-22 |
| 9978870 | FinFET with buried insulator layer and method for forming | Chao-Hsiung Wang, Chi-Wen Liu, Guan-Lin Chen | 2018-05-22 |
| 9966471 | Stacked Gate-All-Around FinFET and method forming the same | Chi-Wen Liu, Ying-Keung Leung | 2018-05-08 |
| 9960273 | Integrated circuit structure with substrate isolation and un-doped channel | Ching-Wei Tsai, Chung-Cheng Wu, Chih-Hao Wang, Wen-Hsing Hsieh, Ying-Keung Leung | 2018-05-01 |
| 9953881 | Method of forming a FinFET device | Ying-Keung Leung | 2018-04-24 |
| 9947587 | Method of forming fin structure of semiconductor device | Jiun-Jia Huang, Chao-Hsiung Wang, Chi-Wen Liu | 2018-04-17 |
| 9947773 | Semiconductor arrangement with substrate isolation | Ching-Wei Tsai, Chih-Hao Wang, Carlos H. Diaz | 2018-04-17 |
| 9941404 | Tuning strain in semiconductor devices | Jean-Pierre Colinge, Gwan Sin Chang, Zhiqiang Wu, Chih-Hao Wang, Carlos H. Diaz | 2018-04-10 |
| 9941406 | FinFETs with source/drain cladding | Ka-Hing Fung, Zhiqiang Wu | 2018-04-10 |
| 9941279 | Semiconductor structure having fins and method for manufacturing the same | Shi Ning Ju, Chih-Hao Wang, Ying-Keung Leung, Carlos H. Diaz | 2018-04-10 |
| 9935011 | Fin spacer protected source and drain regions in FinFETs | Ting-Hung Hsu, Chao-Hsiung Wang, Chi-Wen Liu | 2018-04-03 |
| 9935199 | FinFET with source/drain structure | Ching-Wei Tsai, Chih-Hao Wang, Ying-Keung Leung | 2018-04-03 |
| 9935016 | Silicon and silicon germanium nanowire formation | Carlos H. Diaz, Jean-Pierre Colinge | 2018-04-03 |
| 9929269 | FinFET having an oxide region in the source/drain region | Chih-Hao Wang, Ching-Wei Tsai, Zhiqiang Wu, Jean-Pierre Colinge | 2018-03-27 |
| 9923094 | Source/drain regions for fin field effect transistors and methods of forming same | Chi-Wen Liu | 2018-03-20 |
| 9922978 | Semiconductor structure with recessed source/drain structure and method for forming the same | Ching-Wei Tsai, Ying-Keung Leung | 2018-03-20 |
| 9917178 | Devices including gate spacer with gap or void and methods of forming the same | Ching-Wei Tsai, Chi-Wen Liu, Ying-Keung Leung | 2018-03-13 |
| 9911824 | Semiconductor structure with multi spacer | Ching-Wei Tsai, Chih-Hao Wang, Ying-Keung Leung | 2018-03-06 |
| 9899387 | Multi-gate device and method of fabrication thereof | Chung-Cheng Wu, Ching-Fang Huang, Wen-Hsing Hsieh, Ying-Keung Leung, Cheng-Ting Chung | 2018-02-20 |
| 9899269 | Multi-gate device and method of fabrication thereof | Ching-Wei Tsai, Carlos H. Diaz, Chih-Hao Wang, Wai-Yi Lien, Ying-Keung Leung | 2018-02-20 |
| 9887269 | Multi-gate device and method of fabrication thereof | Ching-Fang Huang, Carlos H. Diaz, Chih-Hao Wang, Wen-Hsing Hsieh, Ying-Keung Leung | 2018-02-06 |
| 9887137 | FinFET devices and methods of forming | Chi-Wen Liu | 2018-02-06 |
| 9881993 | Method of forming semiconductor structure with horizontal gate all around structure | Ching-Wei Tsai, Chih-Hao Wang, Carlos H. Diaz | 2018-01-30 |