Issued Patents 2018
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10163905 | Method and structure for FinFET device | Kuo-Cheng Ching, Ka-Hing Fung, Chih-Sheng Chang | 2018-12-25 |
| 10157985 | MOSFET with selective dopant deactivation underneath gate | Dhanyakumar Mahaveer Sathaiya, Kai-Chieh Yang, Wei-Hao Wu, Ken-Ichi Goto, Yuan-Chen Sun | 2018-12-18 |
| 10134915 | 2-D material transistor with vertical structure | Jean-Pierre Colinge, Chung-Cheng Wu, Carlos H. Diaz, Chih-Hao Wang, Ken-Ichi Goto +3 more | 2018-11-20 |
| 10008603 | Multi-gate device and method of fabrication thereof | Huan-Sheng Wei, Hung-Li Chiang, Chia-Wen Liu, Yi-Ming Sheu, Chung-Cheng Wu +1 more | 2018-06-26 |
| 9966436 | Semiconductor device with non-linear surface | Xiaomeng Chen, Chien-Hong Chen, Shih-Chang Liu | 2018-05-08 |
| 9941406 | FinFETs with source/drain cladding | Kuo-Cheng Ching, Ka-Hing Fung | 2018-04-10 |
| 9941404 | Tuning strain in semiconductor devices | Jean-Pierre Colinge, Kuo-Cheng Ching, Gwan Sin Chang, Chih-Hao Wang, Carlos H. Diaz | 2018-04-10 |
| 9929269 | FinFET having an oxide region in the source/drain region | Kuo-Cheng Ching, Chih-Hao Wang, Ching-Wei Tsai, Jean-Pierre Colinge | 2018-03-27 |
| 9882032 | Structure and method for FinFET device with buried sige oxide | Kuo-Cheng Ching, Chih-Hao Wang, Carlos H. Diaz | 2018-01-30 |
| 9871141 | Thermally tuning strain in semiconductor devices | Carlos H. Diaz, Chih-Hao Wang, Gwan Sin Chang, Jean-Pierre Colinge, Kuo-Cheng Ching | 2018-01-16 |