Issued Patents 2017
Showing 1–24 of 24 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9818608 | Silicon carbide semiconductor substrate, method for manufacturing silicon carbide semiconductor substrate, and method for manufacturing silicon carbide semiconductor device where depression supression layer is formed on backside surface of base substrate opposite to main surface on which epitaxial layer is formed | Taku Horii | 2017-11-14 |
| 9806167 | Method for manufacturing silicon carbide semiconductor device | Taku Horii, Ryosuke Kubota | 2017-10-31 |
| 9799515 | Silicon carbide semiconductor device and method of manufacturing the same | Toru Hiyoshi, Keiji Wada | 2017-10-24 |
| 9793365 | Method for manufacturing silicon carbide semiconductor device having trench | Yu Saitoh, Kenji Hiratsuka | 2017-10-17 |
| 9786741 | Silicon carbide semiconductor device and method for manufacturing the same | Taku Horii, Ryosuke Kubota | 2017-10-10 |
| 9741799 | Silicon carbide semiconductor device and method for manufacturing the same | Toru Hiyoshi, Taku Horii, Shunsuke Yamada | 2017-08-22 |
| 9728633 | Silicon carbide semiconductor device and method for manufacturing the same | Toru Hiyoshi, Keiji Wada, Yu Saitoh | 2017-08-08 |
| 9704957 | Silicon carbide semiconductor device and method of manufacturing the same | — | 2017-07-11 |
| 9691891 | Wide band gap semiconductor device | — | 2017-06-27 |
| 9691859 | Silicon carbide semiconductor device | Toru Hiyoshi, Keiji Wada | 2017-06-27 |
| 9679986 | Silicon carbide semiconductor device | Yu Saitoh, Hideki Hayashi, Toru Hiyoshi, Keiji Wada | 2017-06-13 |
| 9680006 | Silicon carbide semiconductor device and method of manufacturing the same | Toru Hiyoshi, Keiji Wada | 2017-06-13 |
| 9666681 | Silicon carbide semiconductor device and method for manufacturing same | Kosuke Uchida, Yu Saitoh | 2017-05-30 |
| 9659773 | Method for manufacturing silicon carbide semiconductor device by selectively removing silicon from silicon carbide substrate to form protective carbon layer on silicon carbide substrate for activating dopants | — | 2017-05-23 |
| 9647072 | Silicon carbide semiconductor device | Toru Hiyoshi, Keiji Wada, Takashi Tsuno | 2017-05-09 |
| 9647106 | Silicon carbide semiconductor device and method for manufacturing same | — | 2017-05-09 |
| 9647081 | Method for manufacturing silicon carbide semiconductor device | Keiji Wada, Mitsuhiko Sakai | 2017-05-09 |
| 9627525 | Silicon carbide semiconductor device | Toru Hiyoshi, Keiji Wada | 2017-04-18 |
| 9627488 | Silicon carbide semiconductor device and method for manufacturing same | Toru Hiyoshi, Kosuke Uchida | 2017-04-18 |
| 9627487 | Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device | Kenji Hiratsuka, Yu Saitoh | 2017-04-18 |
| 9583346 | Method for manufacturing silicon carbide semiconductor device | Shunsuke Yamada, Taku Horii | 2017-02-28 |
| 9570543 | Semiconductor device | Shunsuke Yamada | 2017-02-14 |
| 9543429 | Silicon carbide semiconductor device | Toru Hiyoshi, Keiji Wada | 2017-01-10 |
| 9543412 | Method for manufacturing silicon carbide semiconductor device | Hideki Hayashi | 2017-01-10 |