Issued Patents 2017
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9818608 | Silicon carbide semiconductor substrate, method for manufacturing silicon carbide semiconductor substrate, and method for manufacturing silicon carbide semiconductor device where depression supression layer is formed on backside surface of base substrate opposite to main surface on which epitaxial layer is formed | Takeyoshi Masuda | 2017-11-14 |
| 9806167 | Method for manufacturing silicon carbide semiconductor device | Takeyoshi Masuda, Ryosuke Kubota | 2017-10-31 |
| 9786741 | Silicon carbide semiconductor device and method for manufacturing the same | Takeyoshi Masuda, Ryosuke Kubota | 2017-10-10 |
| 9768125 | Method of manufacturing semiconductor device with a metal layer along a step portion | Toru Hiyoshi | 2017-09-19 |
| 9741799 | Silicon carbide semiconductor device and method for manufacturing the same | Toru Hiyoshi, Takeyoshi Masuda, Shunsuke Yamada | 2017-08-22 |
| 9728628 | Silicon carbide semiconductor device and method for manufacturing same | Keiji Wada, Taro Nishiguchi, Toru Hiyoshi, Kosuke Uchida | 2017-08-08 |
| 9728607 | Silicon carbide semiconductor device and method for manufacturing silicon carbide semiconductor device | Masaki Kijima | 2017-08-08 |
| 9691616 | Method of manufacturing silicon carbide semiconductor device by using protective films to activate dopants in the silicon carbide semiconductor device | — | 2017-06-27 |
| 9691608 | Silicon carbide substrate, silicon carbide semiconductor device, and methods for manufacturing silicon carbide substrate and silicon carbide semiconductor device | So Tanaka, Shunsuke Yamada, Akira Matsushima, Ryosuke Kubota, Kyoko Okita +1 more | 2017-06-27 |
| 9653297 | Method of manufacturing silicon carbide semiconductor device by forming metal-free protection film | Tomoaki Ishida | 2017-05-16 |
| 9613809 | Method of manufacturing silicon carbide semiconductor device | Masaki Kijima | 2017-04-04 |
| 9583346 | Method for manufacturing silicon carbide semiconductor device | Shunsuke Yamada, Takeyoshi Masuda | 2017-02-28 |