Issued Patents 2017
Showing 1–2 of 2 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9806170 | Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI | George R. Mulfinger, Rick Carter, Peter Baars, Hans-Jürgen Thees, Jan Höntschel | 2017-10-31 |
| 9634143 | Methods of forming FinFET devices with substantially undoped channel regions | Jeremy A. Wahl | 2017-04-25 |