| 9806170 |
Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI |
George R. Mulfinger, Ryan Sporer, Rick Carter, Hans-Jürgen Thees, Jan Höntschel |
2017-10-31 |
| 9793294 |
Junction formation with reduced Ceff for 22nm FDSOI devices |
Hans-Juergen Thees |
2017-10-17 |
| 9735174 |
FDSOI—capacitor |
Jan Hoentschel, Hans-Peter Moll |
2017-08-15 |
| 9673210 |
Semiconductor structure including a nonvolatile memory cell having a charge trapping layer and method for the formation thereof |
Hans-Juergen Thees, Joerg Schmid |
2017-06-06 |
| 9666589 |
FinFET based flash memory cell |
Juergen Faul |
2017-05-30 |
| 9634088 |
Junction formation with reduced CEFF for 22NM FDSOI devices |
Hans-Juergen Thees |
2017-04-25 |
| 9634017 |
Semiconductor structure including a nonvolatile memory cell and method for the formation thereof |
Hans-Juergen Thees |
2017-04-25 |
| 9608110 |
Methods of forming a semiconductor circuit element and semiconductor circuit element |
Carsten Grass |
2017-03-28 |
| 9608003 |
Integrated circuit product with bulk and SOI semiconductor devices |
Hans-Peter Moll, Jan Hoentschel |
2017-03-28 |
| 9564521 |
Semiconductor device comprising ferroelectric elements and fast high-K metal gate transistors |
Till Schloesser |
2017-02-07 |
| 9553030 |
Method of manufacturing P-channel FET device with SiGe channel |
Hans-Peter Moll |
2017-01-24 |
| 9553046 |
E-fuse in SOI configuration |
Jan Hoentschel, Hans-Peter Moll |
2017-01-24 |
