JH

Jan Höntschel

Globalfoundries: 1 patents #454 of 1,311Top 35%
📍 Dresden, DE: #87 of 361 inventorsTop 25%
Overall (2017): #388,370 of 506,227Top 80%
1
Patents 2017

Issued Patents 2017

Showing 1–1 of 1 patents

Patent #TitleCo-InventorsDate
9806170 Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI George R. Mulfinger, Ryan Sporer, Rick Carter, Peter Baars, Hans-Jürgen Thees 2017-10-31