Issued Patents 2017
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9806170 | Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI | George R. Mulfinger, Ryan Sporer, Peter Baars, Hans-Jürgen Thees, Jan Höntschel | 2017-10-31 |