GW

Genyi Wang

CC Csmc Technologies Fab2 Co.: 7 patents #1 of 49Top 3%
📍 Xinwu District, CN: #1 of 14 inventorsTop 8%
Overall (2017): #12,038 of 506,227Top 3%
8
Patents 2017

Issued Patents 2017

Showing 1–8 of 8 patents

Patent #TitleCo-InventorsDate
9673193 Manufacturing method for reverse conducting insulated gate bipolar transistor Shuo Zhang, Qiang Rui, Xiaoshe Deng 2017-06-06
9666682 Reverse conduction insulated gate bipolar transistor (IGBT) manufacturing method Wanli Wang, Xiaoshe Deng, Qiang Rui 2017-05-30
9620615 IGBT manufacturing method Xiaoshe Deng, Qiang Rui, Shuo Zhang 2017-04-11
9607851 Method for removing polysilicon protection layer on a back face of an IGBT having a field stop structure Qiang Rui, Shuo Zhang, Xiaoshe Deng 2017-03-28
9595520 IGBT with built-in diode and manufacturing method therefor Xiaoshe Deng, Shuo Zhang, Qiang Rui 2017-03-14
9590029 Method for manufacturing insulated gate bipolar transistor Shengrong Zhong, Dongfei Zhou, Xiaoshe Deng 2017-03-07
9583587 Method for manufacturing injection-enhanced insulated-gate bipolar transistor Wanli Wang, Xiaoshe Deng, Xuan Huang 2017-02-28
9553164 Method for manufacturing IGBT Xuan Huang, Wanli Wang 2017-01-24