Issued Patents 2017
Showing 1–7 of 7 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9673193 | Manufacturing method for reverse conducting insulated gate bipolar transistor | Shuo Zhang, Qiang Rui, Genyi Wang | 2017-06-06 |
| 9666682 | Reverse conduction insulated gate bipolar transistor (IGBT) manufacturing method | Wanli Wang, Genyi Wang, Qiang Rui | 2017-05-30 |
| 9620615 | IGBT manufacturing method | Qiang Rui, Shuo Zhang, Genyi Wang | 2017-04-11 |
| 9607851 | Method for removing polysilicon protection layer on a back face of an IGBT having a field stop structure | Qiang Rui, Shuo Zhang, Genyi Wang | 2017-03-28 |
| 9595520 | IGBT with built-in diode and manufacturing method therefor | Shuo Zhang, Qiang Rui, Genyi Wang | 2017-03-14 |
| 9590029 | Method for manufacturing insulated gate bipolar transistor | Shengrong Zhong, Dongfei Zhou, Genyi Wang | 2017-03-07 |
| 9583587 | Method for manufacturing injection-enhanced insulated-gate bipolar transistor | Wanli Wang, Genyi Wang, Xuan Huang | 2017-02-28 |