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Qiang Rui

CC Csmc Technologies Fab2 Co.: 4 patents #3 of 49Top 7%
Overall (2017): #26,877 of 506,227Top 6%
5
Patents 2017

Issued Patents 2017

Showing 1–5 of 5 patents

Patent #TitleCo-InventorsDate
9673193 Manufacturing method for reverse conducting insulated gate bipolar transistor Shuo Zhang, Genyi Wang, Xiaoshe Deng 2017-06-06
9666682 Reverse conduction insulated gate bipolar transistor (IGBT) manufacturing method Wanli Wang, Xiaoshe Deng, Genyi Wang 2017-05-30
9620615 IGBT manufacturing method Xiaoshe Deng, Shuo Zhang, Genyi Wang 2017-04-11
9607851 Method for removing polysilicon protection layer on a back face of an IGBT having a field stop structure Shuo Zhang, Genyi Wang, Xiaoshe Deng 2017-03-28
9595520 IGBT with built-in diode and manufacturing method therefor Xiaoshe Deng, Shuo Zhang, Genyi Wang 2017-03-14