| 9755018 |
Bipolar junction transistor structure for reduced current crowding |
Lin Cheng, Sei-Hyung Ryu |
2017-09-05 |
| 9741842 |
Vertical power transistor device |
Vipindas Pala, Lin Cheng, Daniel Jenner Lichtenwalner, John Williams Palmour |
2017-08-22 |
| 9673283 |
Power module for supporting high current densities |
Jason Henning, Qingchun Zhang, Sei-Hyung Ryu, John Williams Palmour, Scott Allen |
2017-06-06 |
| 9639487 |
Managing cache memory in a parallel processing environment |
David Wentzlaff, Matthew Mattina |
2017-05-02 |
| 9640609 |
Double guard ring edge termination for silicon carbide devices |
Qingchun Zhang, Charlotte Jonas |
2017-05-02 |
| 9601605 |
Bipolar junction transistor with improved avalanche capability |
Qingchun Zhang, Lin Cheng |
2017-03-21 |
| 9570560 |
Diffused junction termination structures for silicon carbide devices |
Qingchun Zhang, Tangali S. Sudarshan, Alexander Viktorovich Bolotnikov |
2017-02-14 |
| 9570585 |
Field effect transistor devices with buried well protection regions |
Lin Cheng, Vipindas Pala, John Williams Palmour |
2017-02-14 |
| 9570570 |
Enhanced gate dielectric for a field effect device with a trenched gate |
Daniel Jenner Lichtenwalner, Lin Cheng, John Williams Palmour |
2017-02-14 |
| 9548374 |
High power insulated gate bipolar transistors |
Qingchun Zhang, Sei-Hyung Ryu, Charlotte Jonas |
2017-01-17 |