Issued Patents 2017
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9640609 | Double guard ring edge termination for silicon carbide devices | Qingchun Zhang, Anant Agarwal | 2017-05-02 |
| 9548374 | High power insulated gate bipolar transistors | Qingchun Zhang, Sei-Hyung Ryu, Anant Agarwal | 2017-01-17 |