| 9831355 |
Schottky structure employing central implants between junction barrier elements |
— |
2017-11-28 |
| 9673283 |
Power module for supporting high current densities |
Jason Henning, Sei-Hyung Ryu, Anant Agarwal, John Williams Palmour, Scott Allen |
2017-06-06 |
| 9640609 |
Double guard ring edge termination for silicon carbide devices |
Charlotte Jonas, Anant Agarwal |
2017-05-02 |
| 9640652 |
Semiconductor devices including epitaxial layers and related methods |
Brett Hull |
2017-05-02 |
| 9601605 |
Bipolar junction transistor with improved avalanche capability |
Anant Agarwal, Lin Cheng |
2017-03-21 |
| 9595618 |
Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
— |
2017-03-14 |
| 9570560 |
Diffused junction termination structures for silicon carbide devices |
Anant Agarwal, Tangali S. Sudarshan, Alexander Viktorovich Bolotnikov |
2017-02-14 |
| 9552997 |
Silicon carbide switching devices including P-type channels |
Mrinal K. Das, Sei-Hyung Ryu |
2017-01-24 |
| 9548374 |
High power insulated gate bipolar transistors |
Sei-Hyung Ryu, Charlotte Jonas, Anant Agarwal |
2017-01-17 |