Issued Patents 2017
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9666690 | Integrated circuit and method for fabricating the same having a replacement gate structure | Hoon Kim | 2017-05-30 |
| 9607904 | Atomic layer deposition of HfAlC as a metal gate workfunction material in MOS devices | Albert S. Lee, Paul R. Besser, Edward Haywood, Hoon Kim, Salil Mujumdar | 2017-03-28 |