Issued Patents 2017
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9853112 | Device and method to connect gate regions separated using a gate cut | Stanley Seungchul Song, Kern Rim | 2017-12-26 |
| 9673757 | Modified tunneling field effect transistors and fabrication methods | Min-hwa Chi | 2017-06-06 |
| 9666709 | Non-planar semiconductor structure with preserved isolation region | Xiaoli He, Jerome Ciavatti, Myung-Hee Nam | 2017-05-30 |
| 9653281 | Structure and method for tunable memory cells including fin field effect transistors | Haining Yang | 2017-05-16 |
| 9653466 | FinFET device and method of making the same | Haining Yang | 2017-05-16 |
| 9640538 | Embedded DRAM in replacement metal gate technology | Min-hwa Chi | 2017-05-02 |
| 9607988 | Off-center gate cut | Stanley Seungchul Song | 2017-03-28 |
| 9601578 | Non-planar vertical dual source drift metal-oxide semiconductor (VDSMOS) | Jerome Ciavatti, Vara Govindeswara Reddy Vakada | 2017-03-21 |
| 9577040 | FinFET conformal junction and high epi surface dopant concentration method and device | Peijie Feng, Jianwei Peng, Shesh Mani Pandey, Francis Benistant | 2017-02-21 |
| 9570442 | Applying channel stress to Fin field-effect transistors (FETs) (FinFETs) using a self-aligned single diffusion break (SDB) isolation structure | Jun Yuan | 2017-02-14 |
| 9559176 | FinFET conformal junction and abrupt junction with reduced damage method and device | Peijie Feng, Shesh Mani Pandey, Jianwei Peng, Francis Benistant | 2017-01-31 |
| 9537007 | FinFET with cut gate stressor | Haining Yang | 2017-01-03 |