Issued Patents 2017
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9847411 | Recessed field plate transistor structures | Saptharishi Sriram, Terry Alcorn, Fabian Radulescu | 2017-12-19 |
| 9786660 | Transistor with bypassed gate structure field | Donald Farrell, Simon Wood, Dan Namishia | 2017-10-10 |
| 9711633 | Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions | R. Peter Smith, Yifeng Wu, Sten Heikman, Matthew Jacob-Mitos | 2017-07-18 |
| 9679981 | Cascode structures for GaN HEMTs | Saptharishi Sriram, Terry Alcorn, Fabian Radulescu | 2017-06-13 |
| 9666707 | Nitride-based transistors with a cap layer and a recessed gate | Richard Peter Smith | 2017-05-30 |