Issued Patents 2017
Showing 1–1 of 1 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9711633 | Methods of forming group III-nitride semiconductor devices including implanting ions directly into source and drain regions and annealing to activate the implanted ions | Scott Sheppard, R. Peter Smith, Yifeng Wu, Sten Heikman | 2017-07-18 |