| 9525060 |
Reduced area power devices using deep trench isolation |
Yongxi Zhang, Seetharaman Sridhar |
2016-12-20 |
$18,500,000 |
| 9508869 |
High voltage depletion mode N-channel JFET |
Philip L. Hower, Marie Denison |
2016-11-29 |
$10,580,000 |
| 9476933 |
Apparatus and methods for qualifying HEMT FET devices |
Jungwoo Joh, Srikanth Krishnan |
2016-10-25 |
$21,395,000 |
| 9431302 |
Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structure |
Pinghai Hao, Amitava Chatterjee |
2016-08-30 |
$12,944,000 |
| 9431480 |
Diluted drift layer with variable stripe widths for power transistors |
Yongxi Zhang, Scott Balster |
2016-08-30 |
$12,944,000 |
| 9431286 |
Deep trench with self-aligned sinker |
Binghua Hu, Abbas Ali, Henry Litzmann Edwards, John P. Erdeljac, Britton Robbins +1 more |
2016-08-30 |
$12,944,000 |
| 9412668 |
Low-cost CMOS structure with dual gate dielectrics and method of forming the CMOS structure |
Pinghai Hao, Amitava Chatterjee |
2016-08-09 |
$15,765,000 |
| 9401410 |
Poly sandwich for deep trench fill |
Binghua Hu, Jarvis Benjamin Jacobs |
2016-07-26 |
$35,344,000 |
| 9396948 |
Layer transfer of silicon onto III-nitride material for heterogenous integration |
Naveen Tipirneni, Rick L. Wise |
2016-07-19 |
$10,444,000 |
| 9397211 |
Lateral MOSFET with buried drain extension layer |
Marie Denison, Philip L. Hower |
2016-07-19 |
$10,444,000 |
| 9397023 |
Integration of heat spreader for beol thermal management |
Archana Venugopal, Marie Denison, Luigi Colombo |
2016-07-19 |
$10,444,000 |
| 9385196 |
Fast switching IGBT with embedded emitter shorting contacts and method for making same |
Jacek Korec, John Manning Savidge Neilson |
2016-07-05 |
$11,830,000 |
| 9385187 |
High breakdown N-type buried layer |
Binghua Hu, Henry Litzmann Edwards |
2016-07-05 |
$11,830,000 |
| 9379022 |
Process for forming driver for normally on III-nitride transistors to get normally-off functionality |
Naveen Tipirneni |
2016-06-28 |
$16,410,000 |
| 9362398 |
Low resistance LDMOS with reduced gate charge |
— |
2016-06-07 |
$15,467,000 |
| 9356117 |
Method for forming avalanche energy handling capable III-nitride transistors |
Naveen Tipirneni |
2016-05-31 |
$14,558,000 |
| 9337106 |
Implant profiling with resist |
Binghua Hu |
2016-05-10 |
$12,044,000 |
| 9299832 |
High voltage lateral DMOS transistor with optimized source-side blocking capability |
Philip L. Hower, Marie Denison |
2016-03-29 |
$25,607,000 |
| 9293357 |
Sinker with a reduced width |
Binghua Hu, Guru Mathur, Takehito Tamura |
2016-03-22 |
$16,121,000 |
| 9245998 |
High voltage multiple channel LDMOS |
Yongxi Zhang |
2016-01-26 |
$10,949,000 |
| 9240446 |
Vertical trench MOSFET device in integrated power technologies |
Guru Mathur, Marie Denison |
2016-01-19 |
$12,158,000 |
| 9240465 |
Trench gate trench field plate semi-vertical semi-lateral MOSFET |
Marie Denison, Guru Mathur |
2016-01-19 |
$12,158,000 |
| 9231054 |
Drain extended CMOS with counter-doped drain extension |
Philipp Steinmann, Amitava Chatterjee |
2016-01-05 |
$10,710,000 |