Issued Patents 2016
Showing 1–8 of 8 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9515187 | Controlling the shape of source/drain regions in FinFETs | Tsz-Mei Kwok, Chien-Chang Su, Kuan-Yu Chen, Hsien-Hsin Lin | 2016-12-06 |
| 9502561 | Semiconductor devices and methods of forming the same | Chih-Chiang Chang, Kun-Mu Li, Ming-Hua Yu | 2016-11-22 |
| 9373695 | Method for improving selectivity of epi process | Kuan-Yu Chen, Hsien-Hsin Lin, Chun-Feng Nieh, Chien-Chang Su, Tsz-Mei Kwok | 2016-06-21 |
| 9362360 | Modulating germanium percentage in MOS devices | Tsz-Mei Kwok, Kun-Mu Li, Chii-Horng Li, Tze-Liang Lee | 2016-06-07 |
| 9356150 | Method for incorporating impurity element in EPI silicon process | Chien-Chang Su, Hsien-Hsin Lin, Tsz-Mei Kwok, Kuan-Yu Chen, Yi-Fang Pai | 2016-05-31 |
| 9337337 | MOS device having source and drain regions with embedded germanium-containing diffusion barrier | Tsz-Mei Kwok, Kun-Mu Li, Chii-Horng Li, Tze-Liang Lee | 2016-05-10 |
| 9293537 | High performance strained source-drain structure and method of fabricating the same | Ming-Huan Tsai, Hsien-Hsin Lin, Chun-Fai Cheng, Wei-Han Fan | 2016-03-22 |
| 9287398 | Transistor strain-inducing scheme | Tsz-Mei Kwok, Kun-Mu Li, Chii-Horng Li, Tze-Liang Lee | 2016-03-15 |