Issued Patents 2016
Showing 1–13 of 13 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9515071 | Asymmetric source/drain depths | Cheng-Yi Peng, Yu-Lin Yang, Chia-Cheng Ho, Jung-Piao Chiu, Tsung-Lin Lee +2 more | 2016-12-06 |
| 9502409 | Multi-gate semiconductor devices | Jon-Hsu Ho, Chih-Ching Wang, Ching-Fang Huang, Wen-Hsing Hsieh, Tsung-Hsing Yu +3 more | 2016-11-22 |
| 9466678 | Semiconductor device and manufacturing method thereof | Shih-Hsien Huang, Che-Wei Chang, Tzu-I Tsai | 2016-10-11 |
| 9461041 | Metal gate finFET device | Yu-Lin Yang, Tsu-Hsiu Perng, Li-Shyue Lai | 2016-10-04 |
| 9450094 | Semiconductor process and fin-shaped field effect transistor | Kai-Lin Lee | 2016-09-20 |
| 9425102 | FinFETs with different fin heights | Tsung-Lin Lee, Chang-Yun Chang, Feng Yuan | 2016-08-23 |
| 9419134 | Strain enhancement for FinFETs | Tsung-Lin Lee, Feng Yuan, Hung-Li Chiang, Wei-Jen Lai | 2016-08-16 |
| 9397097 | Gate structure for semiconductor device | Tsung-Lin Lee, Feng Yuan, Wei-Jen Lai | 2016-07-19 |
| 9385046 | Voids in STI regions for forming bulk FinFETs | Hung-Ming Chen, Feng Yuan, Tsung-Lin Lee | 2016-07-05 |
| 9349652 | Method of forming semiconductor device with different threshold voltages | Chia-Cheng Ho, Cheng-Yi Peng, Tsung-Lin Lee, Jung-Piao Chiu | 2016-05-24 |
| 9263342 | Semiconductor device having a strained region | Tsung-Lin Lee, Feng Yuan, Hung-Li Chiang | 2016-02-16 |
| 9257344 | FinFETs with different fin height and EPI height setting | Hung-Li Chiang, Wei-Jen Lai, Feng Yuan, Tsung-Lin Lee | 2016-02-09 |
| 9245805 | Germanium FinFETs with metal gates and stressors | Chih-Sheng Chang, Clement Hsingjen Wann | 2016-01-26 |