Issued Patents 2016
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9515071 | Asymmetric source/drain depths | Cheng-Yi Peng, Yu-Lin Yang, Chia-Cheng Ho, Jung-Piao Chiu, Chih Chieh Yeh +2 more | 2016-12-06 |
| 9484462 | Fin structure of fin field effect transistor | Feng Yuan, Hung-Ming Chen, Chang-Yun Chang, Clement Hsingjen Wann | 2016-11-01 |
| 9425102 | FinFETs with different fin heights | Chih Chieh Yeh, Chang-Yun Chang, Feng Yuan | 2016-08-23 |
| 9419134 | Strain enhancement for FinFETs | Chih Chieh Yeh, Feng Yuan, Hung-Li Chiang, Wei-Jen Lai | 2016-08-16 |
| 9397097 | Gate structure for semiconductor device | Feng Yuan, Chih Chieh Yeh, Wei-Jen Lai | 2016-07-19 |
| 9385046 | Voids in STI regions for forming bulk FinFETs | Hung-Ming Chen, Feng Yuan, Chih Chieh Yeh | 2016-07-05 |
| 9349652 | Method of forming semiconductor device with different threshold voltages | Chia-Cheng Ho, Cheng-Yi Peng, Chih Chieh Yeh, Jung-Piao Chiu | 2016-05-24 |
| 9331081 | Semiconductor structure and manufacturing method thereof | Chun-Ming Lin, Chiu-Hua Chung, Yu-Shine Lin, Bor-Wen Lai | 2016-05-03 |
| 9263342 | Semiconductor device having a strained region | Feng Yuan, Hung-Li Chiang, Chih Chieh Yeh | 2016-02-16 |
| 9257344 | FinFETs with different fin height and EPI height setting | Hung-Li Chiang, Wei-Jen Lai, Feng Yuan, Chih Chieh Yeh | 2016-02-09 |