| 9484459 |
Performance enhancement in transistors by providing an embedded strain-inducing semiconductor material on the basis of a seed layer |
Stephan Kronholz, Gunda Beernink |
2016-11-01 |
| 9472642 |
Method of forming a semiconductor device structure and such a semiconductor device structure |
Jan Hoentschel, Stefan Flachowsky, Ralf Richter |
2016-10-18 |
| 9412859 |
Contact geometry having a gate silicon length decoupled from a transistor length |
Ralf Richter, Jan Hoentschel, Stefan Flachowsky |
2016-08-09 |
| 9412848 |
Methods of forming a complex GAA FET device at advanced technology nodes |
Ralf Richter, Jan Hoentschel, Stefan Flachowsky |
2016-08-09 |
| 9406565 |
Methods for fabricating integrated circuits with semiconductor substrate protection |
Ralf Richter, Jan Hoentschel |
2016-08-02 |
| 9401423 |
Enhancing transistor performance and reliability by incorporating deuterium into a strained capping layer |
Stefan Flachowsky |
2016-07-26 |
| 9391176 |
Multi-gate FETs having corrugated semiconductor stacks and method of forming the same |
Stefan Flachowsky, Jan Hoentschel, Ralf Richter |
2016-07-12 |
| 9373720 |
Three-dimensional transistor with improved channel mobility |
Stefan Flachowsky, Jan Hoentschel, Ralf Richter |
2016-06-21 |
| 9373509 |
FINFET doping method with curvilnear trajectory implantation beam path |
Ralf Richter, Stefan Flachowsky, Jan Hoentschel |
2016-06-21 |
| 9349734 |
Selective FuSi gate formation in gate first CMOS technologies |
Stefan Flachowsky, Gerd Zschätzsch |
2016-05-24 |
| 9343374 |
Efficient main spacer pull back process for advanced VLSI CMOS technologies |
Jan Hoentschel, Stefan Flachowsky, Ralf Richter |
2016-05-17 |
