| 9530620 |
Dual control modes |
— |
2016-12-27 |
| 9508529 |
System, method and apparatus for RF power compensation in a plasma processing system |
Henry Povolny |
2016-11-29 |
| 9502221 |
Etch rate modeling and use thereof with multiple parameters for in-chamber and chamber-to-chamber matching |
Harmeet Singh, Henry Povolny |
2016-11-22 |
| 9502216 |
Using modeling to determine wafer bias associated with a plasma system |
Bradford J. Lyndaker |
2016-11-22 |
| 9462672 |
Adjustment of power and frequency based on three or more states |
Bradford J. Lyndaker |
2016-10-04 |
| 9455126 |
Arrangement for plasma processing system control based on RF voltage |
Henry Povolny |
2016-09-27 |
| 9408288 |
Edge ramping |
Bradford J. Lyndaker, Andrew Fong |
2016-08-02 |
| 9390893 |
Sub-pulsing during a state |
Harmeet Singh, Bradford J. Lyndaker |
2016-07-12 |
| 9368329 |
Methods and apparatus for synchronizing RF pulses in a plasma processing system |
Bradford J. Lyndaker, Harmeet Singh |
2016-06-14 |
| 9320127 |
Tuning a parameter associated with plasma impedance |
Bradford J. Lyndaker |
2016-04-19 |
| 9320126 |
Determining a value of a variable on an RF transmission model |
Bradford J. Lyndaker |
2016-04-19 |
| 9299539 |
Method and apparatus for measuring wafer bias potential |
Konstantin Makhratchev |
2016-03-29 |
| 9295148 |
Computation of statistics for statistical data decimation |
Andrew Fong |
2016-03-22 |
| 9236228 |
Frequency enhanced impedance dependent power control for multi-frequency RF pulsing |
Bradford J. Lyndaker |
2016-01-12 |
