| 9530921 |
Multi-junction solar cell |
Bahman Hekmatshoartabari, Davood Shahrjerdi |
2016-12-27 |
| 9520496 |
Charge carrier transport facilitated by strain |
Guy M. Cohen |
2016-12-13 |
| 9502562 |
Fin field effect transistor including self-aligned raised active regions |
Guy M. Cohen, Amlan Majumdar |
2016-11-22 |
| 9484463 |
Fabrication process for mitigating external resistance of a multigate device |
Guy M. Cohen, Amlan Majumdar |
2016-11-01 |
| 9472667 |
III-V MOSFET with strained channel and semi-insulating bottom barrier |
Guy M. Cohen, Amlan Majumdar |
2016-10-18 |
| 9472658 |
III-V nanowire FET with compositionally-graded channel and wide-bandgap core |
Guy M. Cohen, Amlan Majumdar, Jeffrey W. Sleight |
2016-10-18 |
| 9431494 |
Low interfacial defect field effect transistor |
Guy M. Cohen, Amlan Majumdar |
2016-08-30 |
| 9425312 |
Silicon-containing, tunneling field-effect transistor including III-N source |
Bahman Hekmatshoartabari, Davood Shahrjerdi |
2016-08-23 |
| 9397226 |
Vertical field effect transistors with controlled overlap between gate electrode and source/drain contacts |
Cheng-Wei Cheng, Wilfried E. Haensch, Amlan Majumdar, Kuen-Ting Shiu |
2016-07-19 |
| 9368574 |
Nanowire field effect transistor with inner and outer gates |
Guy M. Cohen, Amlan Majumdar, Jeffrey W. Sleight |
2016-06-14 |
| 9343569 |
Vertical compound semiconductor field effect transistor on a group IV semiconductor substrate |
Bahman Hekmatshoartabari, Davood Shahrjerdi |
2016-05-17 |
| 9337309 |
Reducing direct source-to-drain tunneling in field effect transistors with low effective mass channels |
Amlan Majumdar, Jeffrey W. Sleight |
2016-05-10 |
| 9337255 |
Reducing direct source-to-drain tunneling in field effect transistors with low effective mass channels |
Amlan Majumdar, Jeffrey W. Sleight |
2016-05-10 |
| 9324853 |
III-V semiconductor device having self-aligned contacts |
Amlan Majumdar, Kuen-Ting Shiu, Yanning Sun |
2016-04-26 |
| 9318561 |
Device isolation for III-V substrates |
Guy M. Cohen |
2016-04-19 |
| 9287362 |
Vertical field effect transistors with controlled overlap between gate electrode and source/drain contacts |
Cheng-Wei Cheng, Wilfried E. Haensch, Amlan Majumdar, Kuen-Ting Shiu |
2016-03-15 |
| 9287360 |
III-V nanowire FET with compositionally-graded channel and wide-bandgap core |
Guy M. Cohen, Amlan Majumdar, Jeffrey W. Sleight |
2016-03-15 |
| 9275546 |
System and method for minimizing the time to park a vehicle |
Aleksandr Y. Aravkin, Dimitri Kanevsky, Tara N. Sainath, Premal Shah |
2016-03-01 |
| 9276077 |
Contact metallurgy for self-aligned high electron mobility transistor |
— |
2016-03-01 |
| 9270940 |
Remote object sensing in video |
Aleksandr Y. Aravkin, Dimitri Kanevsky, Tara N. Sainath |
2016-02-23 |
| 9263464 |
Field effect transistors including contoured channels and planar channels |
Pouya Hashemi |
2016-02-16 |
| 9263260 |
Nanowire field effect transistor with inner and outer gates |
Guy M. Cohen, Amlan Majumdar, Jeffrey W. Sleight |
2016-02-16 |
| 9231094 |
Elemental semiconductor material contact for high electron mobility transistor |
Bahman Hekmatshoartabari, Davood Shahrjerdi |
2016-01-05 |
| 9227855 |
Large-scale electricity-less disinfection of fluent water |
Stephen W. Bedell, Wilfried E. Haensch, Davood Shahrjerdi |
2016-01-05 |
