Issued Patents 2011
Showing 1–17 of 17 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8071983 | Semiconductor device structures and methods of forming semiconductor structures | Justin K. Brask, Jack T. Kavalieros, Uday Shah, Amlan Majumdar, Robert S. Chau +1 more | 2011-12-06 |
| 7989280 | Dielectric interface for group III-V semiconductor device | Justin K. Brask, Mark L. Doczy, James M. Blackwell, Matthew V. Metz, Jack T. Kavalieros +1 more | 2011-08-02 |
| 7968957 | Transistor gate electrode having conductor material layer | Anand S. Murthy, Boyan Boyanov, Brian S. Doyle, Been-Yih Jin, Shaofeng Yu +1 more | 2011-06-28 |
| 7960794 | Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow | Brian S. Doyle, Been-Yih Jin, Nancy Zelick, Robert S. Chau | 2011-06-14 |
| 7951673 | Forming abrupt source drain metal gate transistors | Nick Lindert, Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Justin K. Brask +3 more | 2011-05-31 |
| 7915167 | Fabrication of channel wraparound gate structure for field-effect transistor | Marko Radosavljevic, Amlan Majumdar, Jack T. Kavalieros, Brian S. Doyle, Justin K. Brask +1 more | 2011-03-29 |
| 7915694 | Gate electrode having a capping layer | Gilbert Dewey, Mark L. Doczy, Justin K. Brask, Matthew V. Metz | 2011-03-29 |
| 7902014 | CMOS devices with a single work function gate electrode and method of fabrication | Brian S. Doyle, Been-Yih Jin, Jack T. Kavalieros, Justin K. Brask, Robert S. Chau | 2011-03-08 |
| 7902058 | Inducing strain in the channels of metal gate transistors | Jack T. Kavalieros, Mark L. Doczy, Matthew V. Metz, Justin K. Brask, Robert S. Chau +1 more | 2011-03-08 |
| 7898041 | Block contact architectures for nanoscale channel transistors | Marko Radosavljevic, Amlan Majumdar, Brian S. Doyle, Jack T. Kavalieros, Mark L. Doczy +3 more | 2011-03-01 |
| 7893506 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Robert S. Chau, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy, Matthew V. Metz | 2011-02-22 |
| 7888221 | Tunneling field effect transistor using angled implants for forming asymmetric source/drain regions | Jack T. Kavalieros, Matthew V. Metz, Gilbert Dewey, Been-Yih Jin, Justin K. Brask +1 more | 2011-02-15 |
| 7883951 | CMOS device with metal and silicide gate electrodes and a method for making it | Justin K. Brask, Mark L. Doczy, Jack T. Kavalieros, Matthew V. Metz, Chris Barns +3 more | 2011-02-08 |
| 7879675 | Field effect transistor with metal source/drain regions | Marko Radosavljevic, Brian S. Doyle, Jack T. Kavalieros, Justin K. Brask, Mark L. Doczy +2 more | 2011-02-01 |
| 7879739 | Thin transition layer between a group III-V substrate and a high-k gate dielectric layer | Willy Rachmady, James M. Blackwell, Jack T. Kavalieros, Mantu K. Hudait | 2011-02-01 |
| 7875937 | Semiconductor device with a high-k gate dielectric and a metal gate electrode | Matthew V. Metz, Mark L. Doczy, Justin K. Brask, Jack T. Kavalieros, Robert S. Chau | 2011-01-25 |
| 7871916 | Transistor gate electrode having conductor material layer | Anand S. Murthy, Boyan Boyanov, Brian S. Doyle, Been-Yih Jin, Shaofeng Yu +1 more | 2011-01-18 |