Issued Patents 2011
Showing 1–12 of 12 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8021940 | Methods for fabricating PMOS metal gate structures | Matthew V. Metz, Gilbert Dewey, Jack T. Kavalieros | 2011-09-20 |
| 8013401 | Selectively depositing aluminum in a replacement metal gate process | Adrien LaVoie | 2011-09-06 |
| 7989280 | Dielectric interface for group III-V semiconductor device | Justin K. Brask, Suman Datta, James M. Blackwell, Matthew V. Metz, Jack T. Kavalieros +1 more | 2011-08-02 |
| 7951673 | Forming abrupt source drain metal gate transistors | Nick Lindert, Suman Datta, Jack T. Kavalieros, Matthew V. Metz, Justin K. Brask +3 more | 2011-05-31 |
| 7936025 | Metalgate electrode for PMOS transistor | Robert S. Chau, Brian S. Doyle, Jack T. Kavalieros | 2011-05-03 |
| 7915694 | Gate electrode having a capping layer | Gilbert Dewey, Suman Datta, Justin K. Brask, Matthew V. Metz | 2011-03-29 |
| 7902058 | Inducing strain in the channels of metal gate transistors | Suman Datta, Jack T. Kavalieros, Matthew V. Metz, Justin K. Brask, Robert S. Chau +1 more | 2011-03-08 |
| 7898041 | Block contact architectures for nanoscale channel transistors | Marko Radosavljevic, Amlan Majumdar, Brian S. Doyle, Jack T. Kavalieros, Justin K. Brask +3 more | 2011-03-01 |
| 7893506 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Robert S. Chau, Suman Datta, Jack T. Kavalieros, Justin K. Brask, Matthew V. Metz | 2011-02-22 |
| 7883951 | CMOS device with metal and silicide gate electrodes and a method for making it | Justin K. Brask, Jack T. Kavalieros, Matthew V. Metz, Chris Barns, Uday Shah +3 more | 2011-02-08 |
| 7879675 | Field effect transistor with metal source/drain regions | Marko Radosavljevic, Suman Datta, Brian S. Doyle, Jack T. Kavalieros, Justin K. Brask +2 more | 2011-02-01 |
| 7875937 | Semiconductor device with a high-k gate dielectric and a metal gate electrode | Matthew V. Metz, Suman Datta, Justin K. Brask, Jack T. Kavalieros, Robert S. Chau | 2011-01-25 |