WN

Wendell P. Noble

Micron: 12 patents #35 of 861Top 5%
📍 Colchester, VT: #2 of 53 inventorsTop 4%
🗺 Vermont: #7 of 502 inventorsTop 2%
Overall (2005): #588 of 245,428Top 1%
12
Patents 2005

Issued Patents 2005

Showing 1–12 of 12 patents

Patent #TitleCo-InventorsDate
6964903 Method of fabricating a transistor on a substrate to operate as a fully depleted structure Leonard Forbes 2005-11-15
6960821 Method and apparatus on (110) surfaces of silicon structures with conduction in the <110> direction Leonard Forbes, Alan R. Reinberg 2005-11-01
6946700 Trench DRAM cell with vertical device and buried word lines 2005-09-20
6946389 Method of forming buried conductors Paul A. Farrar 2005-09-20
6936886 High density SRAM cell with latched vertical transistors Leonard Forbes 2005-08-30
6924194 DRAM technology compatible processor/memory chips Leonard Forbes, Eugene H. Cloud 2005-08-02
6909635 Programmable memory cell using charge trapping in a gate oxide Leonard Forbes, Eugene H. Cloud 2005-06-21
6891213 Base current reversal SRAM memory cell and method 2005-05-10
6887749 Multiple oxide thicknesses for merged memory and logic applications Leonard Forbes 2005-05-03
6884687 SEMICONDUCTOR PROCESSING METHODS OF FORMING INTEGRATED CIRCUITRY, FORMING CONDUCTIVE LINES, FORMING A CONDUCTIVE GRID, FORMING A CONDUCTIVE NETWORK, FORMING AN ELECTRICAL INTERCONNECTION TO A NODE LOCATION, FORMING AN ELECTRICAL INTERCONNECTION WITH A TRANSISTOR SOURCE/DRAIN REGION, AND INTEGRATED CIRCUITRY 2005-04-26
6861311 SEMICONDUCTOR PROCESSING METHODS OF FORMING INTEGRATED CIRCUITRY, FORMING CONDUCTIVE LINES, FORMING A CONDUCTIVE GRID, FORMING A CONDUCTIVE NETWORK, FORMING AN ELECTRICAL INTERCONNECTION TO A NODE LOCATION, FORMING AN ELECTRICAL INTERCONNECTION WITH A TRANSISTOR SOURCE/DRAIN REGION, AND INTEGRATED CIRCUITRY 2005-03-01
6858504 Method for forming gate segments for an integrated circuit 2005-02-22