LY

Liang-Gi Yao

TSMC: 3 patents #56 of 898Top 7%
📍 Fenglin, TW: #1 of 8 inventorsTop 15%
Overall (2004): #24,843 of 270,089Top 10%
3
Patents 2004

Issued Patents 2004

Showing 1–3 of 3 patents

Patent #TitleCo-InventorsDate
6780741 Method of forming a novel gate electrode structure comprised of a silicon-germanium layer located between random grained polysilicon layers Chia-Lin Chen, Shih-Chang Chen 2004-08-24
6764927 Chemical vapor deposition (CVD) method employing wetting pre-treatment Ming-Fang Wang, Yeou-Ming Lin, Tuo-Hung Ho, Shih-Chang Chen 2004-07-20
6706581 Dual gate dielectric scheme: SiON for high performance devices and high k for low power devices Tou-Hung Hou, Ming-Fang Wang, Chi-Chun Chen, Chih-Wei Yang, Shih-Chang Chen 2004-03-16