Issued Patents 2004
Showing 1–14 of 14 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6835975 | DRAM circuitry having storage capacitors which include capacitor dielectric regions comprising aluminum nitride | Brenda D. Kraus | 2004-12-28 |
| 6821855 | Reverse metal process for creating a metal silicide transistor gate structure | Werner Juengling | 2004-11-23 |
| 6794238 | Process for forming metallized contacts to periphery transistors | Terry McDaniel | 2004-09-21 |
| 6784501 | Process for forming metalized contacts to periphery transistors | Terry McDaniel | 2004-08-31 |
| 6773980 | Methods of forming a field emission device | Brenda D. Kraus | 2004-08-10 |
| 6770927 | Structures comprising transistor gates | Chih-Chen Cho, Charles H. Dennison | 2004-08-03 |
| 6737730 | High-pressure anneal process for integrated circuits | Phillip G. Wald | 2004-05-18 |
| 6710420 | Semiconductor construction of a trench | David Dickerson, Charles H. Dennison, Kunal R. Parekh, Mark Fischer, John K. Zahurak | 2004-03-23 |
| 6703327 | High-pressure anneal process for integrated circuits | Phillip G. Wald | 2004-03-09 |
| 6703326 | High-pressure anneal process for integrated circuits | Phillip G. Wald | 2004-03-09 |
| 6703325 | High pressure anneal process for integrated circuits | Phillip G. Wald | 2004-03-09 |
| 6693014 | Method of improving static refresh | Mark Fischer, Charles H. Dennison, Fawad Ahmed, John K. Zahurak, Kunal R. Parekh | 2004-02-17 |
| 6693048 | High-pressure anneal process for integrated circuits | Phillip G. Wald | 2004-02-17 |
| 6673726 | High-pressure anneal process for integrated circuits | Phillip G. Wald | 2004-01-06 |