Issued Patents 2004
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6812134 | Dual layer barrier film techniques to prevent resist poisoning | Hong-Qiang Lu, Wei-Jen Hsia | 2004-11-02 |
| 6800940 | Low k dielectric composite layer for integrated circuit structure which provides void-free low k dielectric material between metal lines while mitigating via poisoning | Richard Schinella | 2004-10-05 |
| 6794756 | Integrated circuit structure having low dielectric constant material and having silicon oxynitride caps over closely spaced apart metal lines | Weidan Li, Wei-Jen Hsia | 2004-09-21 |
| 6790784 | Plasma treatment of low dielectric constant dielectric material to form structures useful in formation of metal interconnects and/or filled vias for intergrated circuit structure | Wei-Jen Hsia | 2004-09-14 |
| 6777807 | Interconnect integration | Valeriy Sukharev, Hongqiang Lu | 2004-08-17 |
| 6774057 | Method and structure for forming dielectric layers having reduced dielectric constants | Hong-Qiang Lu, Wei-Jen Hsia | 2004-08-10 |
| 6767832 | In situ liner barrier | Kiran Kumar, Zhihai Wang, Kai Zhang | 2004-07-27 |
| 6756674 | Low dielectric constant silicon oxide-based dielectric layer for integrated circuit structures having improved compatibility with via filler materials, and method of making same | Wei-Jen Hsia, Weidan Li, Joe W. Zhao | 2004-06-29 |
| 6734560 | Diamond barrier layer | Zhihai Wang | 2004-05-11 |
| 6727177 | Multi-step process for forming a barrier film for use in copper layer formation | Zhihai Wang, Ping Li | 2004-04-27 |
| 6686272 | Anti-reflective coatings for use at 248 nm and 193 nm | Sang-Yun Lee, Masaichi Eda, Hongqiang Lu, Wei-Jen Hsia, Hiroaki Takikawa +1 more | 2004-02-03 |