Issued Patents 2003
Showing 1–11 of 11 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6660613 | Method and device for forming an STI type isolation in a semiconductor device | Chul-Sung Kim, Si-Young Choi, Jong-Ryol Ryu, Byeong-Chan Lee | 2003-12-09 |
| 6645866 | Method of fabricating a semiconductor device using trench isolation method including hydrogen annealing step | Tai-Su Park, Kyung Won Park, Won-sang Song | 2003-11-11 |
| 6628155 | Internal clock generating circuit of semiconductor memory device and method thereof | Uk-Rae Cho, Nam-Seog Kim | 2003-09-30 |
| 6620667 | Method of making a HF LDMOS structure with a trench type sinker | Cheon-Soo Kim, Hyun-Kyu Yu, Nam Hwang | 2003-09-16 |
| 6617894 | Circuits and methods for generating internal clock signal of intermediate phase relative to external clock | Yong-Jin Yoon, Uk-Rae Cho, Kwang-Jin Lee, Nam-Seog Kim | 2003-09-09 |
| 6596605 | Method of forming germanium doped polycrystalline silicon gate of MOS transistor and method of forming CMOS transistor device using the same | Jung-Min Ha | 2003-07-22 |
| 6580134 | Field effect transistors having elevated source/drain regions | Won-sang Song, Gil-Gwang Lee, Tae-Hee Choe | 2003-06-17 |
| 6577175 | Method for generating internal clock of semiconductor memory device and circuit thereof | Nam-Seog Kim | 2003-06-10 |
| 6562707 | Method of forming a semiconductor device using selective epitaxial growth | Jong-Ryol Ryu, Jung-Min Ha, Si-Young Choi | 2003-05-13 |
| 6511888 | Method of fabricating a semiconductor device using trench isolation method including hydrogen annealing step | Tai-Su Park, Kyung Won Park, Won-sang Song | 2003-01-28 |
| 6509774 | Delay circuit using current source | Nam-Seog Kim | 2003-01-21 |