RF

Robert J. Falster

MM Memc Electronic Materials: 7 patents #1 of 53Top 2%
MS Memc Electronic Materials S.P.A.: 1 patents #1 of 4Top 25%
Overall (2003): #2,779 of 273,478Top 2%
8
Patents 2003

Issued Patents 2003

Showing 1–8 of 8 patents

Patent #TitleCo-InventorsDate
6652646 Process for growing a silicon crystal segment substantially free from agglomerated intrinsic point defects which allows for variability in the process conditions Vladimir V. Voronkov, Paolo Mutti 2003-11-25
6638357 Method for revealing agglomerated intrinsic point defects in semiconductor crystals Luciano Mule'Stagno 2003-10-28
6605150 Low defect density regions of self-interstitial dominated silicon Joseph C. Holzer 2003-08-12
6586068 Ideal oxygen precipitating silicon wafer having an asymmetrical vacancy concentration profile and a process for the preparation thereof Marco Cornara, Daniela Gambaro, Massimiliano Olmo 2003-07-01
6579779 Process for the preparation of an ideal oxygen precipitating silicon wafer having an asymmetrical vacancy concentration profile capable of forming an enhanced denuded zone 2003-06-17
6565649 Epitaxial wafer substantially free of grown-in defects Luciano Mule′Stagno, Lu Fei, Joseph C. Holzer, Harold W. Korb 2003-05-20
6562123 Process for growing defect-free silicon wherein the grown silicon is cooled in a separate chamber Harold W. Korb 2003-05-13
6537368 Ideal oxygen precipitating epitaxial silicon wafers and oxygen out-diffusion-less process therefor Marco Cornara, Daniela Gambaro, Massimiliano Olmo 2003-03-25