SH

Suryanarayan G. Hegde

IBM: 2 patents #1,011 of 5,539Top 20%
📍 Hollowville, NY: #1 of 1 inventorsTop 100%
🗺 New York: #1,452 of 9,423 inventorsTop 20%
Overall (2003): #41,612 of 273,478Top 20%
2
Patents 2003

Issued Patents 2003

Showing 1–2 of 2 patents

Patent #TitleCo-InventorsDate
6569781 Method of forming an ultra-thin oxide layer on a silicon substrate by implantation of nitrogen through a sacrificial layer and subsequent annealing prior to oxide formation Omer H. Dokumaci, Richard D. Kaplan, Mukesh V. Khare 2003-05-27
6514843 Method of enhanced oxidation of MOS transistor gate corners Omer H. Dokumaci, Oleg Gluschenkov, Richard D. Kaplan, Mukesh V. Khare 2003-02-04