Issued Patents 2002
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6500678 | Methods of preventing reduction of IrOx during PZT formation by metalorganic chemical vapor deposition or other processing | Sanjeev Aggarwal, Stephen Roy Gilbert | 2002-12-31 |
| 6486520 | Structure and method for a large-permittivity gate using a germanium layer | Yasutoshi Okuno | 2002-11-26 |
| 6485988 | Hydrogen-free contact etch for ferroelectric capacitor formation | Shawming Ma, Guoqiang Xing, Rahim Kavari, Tomoyuki Sakoda | 2002-11-26 |
| 6462931 | High-dielectric constant capacitor and memory | Shaoping Tang, John Mark Anthony | 2002-10-08 |
| 6444542 | Integrated circuit and method | Theodore S. Moise, Guoqiang Xing, Mark Visokay, Justin Gaynor, Stephen Roy Gilbert +2 more | 2002-09-03 |
| 6441415 | Ferroelectric and paraelectric thin film devices using dopants which eliminate ferroelectricity | Theodore S. Moise, Stephen Roy Gilbert, Charles D. E. Lakeman, Stacey A. Yamanaka | 2002-08-27 |
| 6432473 | PB substituted perovskites for thin films dielectrics | Howard R. Beratan, Bernard M. Kulwicki | 2002-08-13 |
| 6362068 | Electrode interface for high-dielectric-constant materials | Howard R. Beratan | 2002-03-26 |
| 6362499 | Ferroelectric transistors using thin film semiconductor gate electrodes | Theodore S. Moise | 2002-03-26 |