Issued Patents 2002
Showing 1–3 of 3 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6468915 | Method of silicon oxynitride ARC removal after gate etching | — | 2002-10-22 |
| 6436839 | Increasing programming silicide process window by forming native oxide film on amourphous Si after metal etching | Hsiu-Hsiang Lin, Kang-Hei Chang | 2002-08-20 |
| 6350390 | Plasma etch method for forming patterned layer with enhanced critical dimension (CD) control | Chang-Jen Shieh, Pei-Hung Chen | 2002-02-26 |