RS

Reinhard Stengl

SA Siemens Aktiengesellschaft: 5 patents #1 of 792Top 1%
KT Kabushiki Kaisha Toshiba: 1 patents #480 of 1,730Top 30%
IBM: 1 patents #1,061 of 3,557Top 30%
📍 Munich, NC: #1 of 1 inventorsTop 100%
Overall (1997): #3,581 of 185,788Top 2%
5
Patents 1997

Issued Patents 1997

Showing 1–5 of 5 patents

Patent #TitleCo-InventorsDate
5674769 Process for forming deep trench DRAMs with sub-groundrule gates Johann Alsmeier, Christine Dehm, Erwin Hammerl 1997-10-07
5670805 Controlled recrystallization of buried strap in a semiconductor memory device Erwin Hammerl, Jack A. Mandelman, Herbert L. Ho, Junichi Shiozawa 1997-09-23
5663107 Global planarization using self aligned polishing or spacer technique and isotropic etch process Matthias Peschke 1997-09-02
5643836 Method for producing a semiconductor layer structure having a planarized surface and the use thereof in the manufacture of bipolar transistors and DRAMS Thomas Meister 1997-07-01
5627092 Deep trench dram process on SOI for low leakage DRAM cell Johann Alsmeier 1997-05-06