Issued Patents 1997
Showing 1–25 of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5696388 | Thin film transistors for the peripheral circuit portion and the pixel portion | Fumiaki Funada, Tatsuo Morita, Hirohisa Tanaka, Toru Takayama | 1997-12-09 |
| 5693541 | Method for manufacturing a semiconductor device using a silicon nitride mask | Shunpei Yamazaki | 1997-12-02 |
| 5686328 | Semiconductor device and process for fabricating the same | Jun Koyama, Satoshi Teramoto | 1997-11-11 |
| 5681759 | Method of fabricating semiconductor device | — | 1997-10-28 |
| 5677549 | Semiconductor device having a plurality of crystalline thin film transistors | Toru Takayama, Yasuhiko Takemura | 1997-10-14 |
| 5677559 | Electric circuit and method for forming the same | Hideki Uochi, Hiroki Adachi, Itaru Koyama, Shunpei Yamazaki | 1997-10-14 |
| 5650636 | Active matrix display and electrooptical device | Yasuhiko Takemura, Toshiji Hamatani, Toshimitsu Konuma, Jun Koyama, Yuji Kawasaki +1 more | 1997-07-22 |
| 5650338 | Method for forming thin film transistor | Shunpei Yamazaki, Hideki Uochi, Hiroki Adachi, Yasuhiko Takemura | 1997-07-22 |
| 5648277 | Method of manufacturing a semiconductor device | Naoaki Yamaguchi, Yasuhiko Takemura | 1997-07-15 |
| 5648662 | Electro-optical device with amorphous and crystalline shift registers | Naoto Kusumoto | 1997-07-15 |
| 5646424 | Transistor device employing crystallization catalyst | Toru Takayama, Yasuhiko Takemura | 1997-07-08 |
| 5643826 | Method for manufacturing a semiconductor device | Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga | 1997-07-01 |
| 5639698 | Semiconductor, semiconductor device, and method for fabricating the same | Shunpei Yamazaki, Yasuhiko Takemura, Toru Takayama, Hideki Uochi | 1997-06-17 |
| 5627384 | Semiconductor device and method of fabricating the same | Satoshi Teramoto, Yasuhiko Takemura | 1997-05-06 |
| 5624851 | Process of fabricating a semiconductor device in which one portion of an amorphous silicon film is thermally crystallized and another portion is laser crystallized | Toru Takayama, Yasuhiko Takemura | 1997-04-29 |
| 5620906 | Method for producing semiconductor device by introducing hydrogen ions | Naoaki Yamaguchi, Satoshi Teramoto, Hideto Ohnuma | 1997-04-15 |
| 5620905 | Method of fabricating thin film semiconductor integrated circuit | Toshimitsu Konuma, Masaaki Hiroki, Mutsuo Yamamoto, Yasuhiko Takemura | 1997-04-15 |
| 5614733 | Semiconductor device having crystalline thin film transistors | Toru Takayama, Yasuhiko Takemura | 1997-03-25 |
| 5614426 | Method of manufacturing semiconductor device having different orientations of crystal channel growth | Fumiaki Funada, Tatsuo Morita, Hirohisa Tanaka, Toru Takayama | 1997-03-25 |
| 5612250 | Method for manufacturing a semiconductor device using a catalyst | Hisashi Ohtani, Akiharu Miyanaga, Naoaki Yamaguchi, Atsunori Suzuki | 1997-03-18 |
| 5608251 | Thin film semiconductor integrated circuit and method of fabricating the same | Toshimitsu Konuma, Masaaki Hiroki, Mutsuo Yamamoto, Yasuhiko Takemura | 1997-03-04 |
| 5608232 | Semiconductor, semiconductor device, and method for fabricating the same | Shunpei Yamazaki, Yasuhiko Takemura, Toru Takayama, Hideki Uochi | 1997-03-04 |
| 5605846 | Method for manufacturing semiconductor device | Hisahi Ohtani, Akiharu Miyanaga, Naoaki Yamaguchi | 1997-02-25 |
| 5605847 | Process for fabricating a TFT by selectively oxidizing or nitriding a light shielding layer | — | 1997-02-25 |
| 5604360 | Semiconductor device including a plurality of thin film transistors at least some of which have a crystalline silicon film crystal-grown substantially in parallel to the surface of a substrate for the transistor | Toru Takayama, Yasuhiko Takemura, Akiharu Miyanaga | 1997-02-18 |