Issued Patents 1997
Showing 1–1 of 1 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5593923 | Method of fabricating semiconductor device having refractory metal silicide layer on impurity region using damage implant and single step anneal | Tadahiko Horiuchi, Takashi Ishigami, Hiroyuki Nakamura, Tohru Mogami, Hitoshi Wakabayashi +1 more | 1997-01-14 |