Issued Patents 1997
Showing 1–1 of 1 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5652166 | Process for fabricating dual-gate CMOS having in-situ nitrogen-doped polysilicon by rapid thermal chemical vapor deposition | Shi-Chung Sun | 1997-07-29 |
Showing 1–1 of 1 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 5652166 | Process for fabricating dual-gate CMOS having in-situ nitrogen-doped polysilicon by rapid thermal chemical vapor deposition | Shi-Chung Sun | 1997-07-29 |