Issued Patents All Time
Showing 1–20 of 20 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12424822 | Semiconductor laser diode including multiple active layers and a grating layer | Chien Hung Pan | 2025-09-23 |
| 12424824 | Vertical-cavity surface-emitting semiconductor laser diode with the mode filter | Van-Truoung Dai, Chao-Hsing Huang, Van-Chien Nguyen | 2025-09-23 |
| 12316076 | Vertical cavity surface emitting laser diode (VCSEL) with tunnel junction | Chao-Hsing Huang, Van-Truong Dai | 2025-05-27 |
| 12295152 | High ruggedness heterojunction bipolar transistor (HBT) | Chao-Hsing Huang, Kai-Yu Chen | 2025-05-06 |
| 11929427 | High ruggedness heterojunction bipolar transistor (HBT) | Chao-Hsing Huang, Kai-Yu Chen | 2024-03-12 |
| 11862938 | Semiconductor laser diode | Chao-Hsing Huang, Van-Truong Dai, Jhao-Hang He, Hung-Chi Hsiao | 2024-01-02 |
| 11799011 | Semiconductor epitaxial wafer | Chao-Hsing Huang, Van-Truong Dai | 2023-10-24 |
| 11721954 | Vertical cavity surface emitting laser diode (VCSEL) having AlGaAsP layer with compressive strain | Chao-Hsing Huang, Van-Truong Dai | 2023-08-08 |
| 11482830 | Measurement method of reflection spectrum of vertical cavity surface emitting laser diode (VCSEL) and epitaxial wafer test fixture | Chao-Hsing Huang, Van-Truong Dai | 2022-10-25 |
| 11158995 | Laser diode with defect blocking layer | Chao-Hsing Huang, Van-Truong Dai | 2021-10-26 |
| 11133405 | High ruggedness heterojunction bipolar transistor | Chao-Hsing Huang, Min-Nan Tseng, Kai-Yu Chen | 2021-09-28 |
| 11049936 | High ruggedness heterojunction bipolar transistor structure | Chao-Hsing Huang, Min-Nan Tseng, Kai-Yu Chen | 2021-06-29 |
| 10818781 | Heterojunction bipolar transistor structure with a bandgap graded hole barrier layer | Chao-Hsing Huang, Min-Nan Tseng, Kai-Yu Chen | 2020-10-27 |
| 10651298 | Heterojunction bipolar transistor structure with a bandgap graded hole barrier layer | Chao-Hsing Huang, Min-Nan Tseng, Kai-Yu Chen | 2020-05-12 |
| 9853136 | Directed epitaxial heterojunction bipolar transistor | Chao-Hsing Huang, Min-Nan Tseng | 2017-12-26 |
| 9130027 | High electron mobility bipolar transistor | Chao-Hsing Huang | 2015-09-08 |
| 8994069 | BiHEMT device having a stacked separating layer | Chao-Hsing Huang | 2015-03-31 |
| 7573080 | Transient suppression semiconductor device | Chao-Hsing Huang | 2009-08-11 |
| 7385236 | BiFET semiconductor device having vertically integrated FET and HBT | Chao-Hsing Huang, Wei Wang, Kun-Chuan Lin | 2008-06-10 |
| 7224005 | Heterojunction bipolar transistor structure | Chao-Hsing Huang, Min-Nan Tseng, Huai-Tung Yang, Kun-Chuan Lin, Shih-Jane Tsai | 2007-05-29 |