Issued Patents All Time
Showing 1–22 of 22 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9985177 | Ultraviolet light emitting devices and methods of fabrication | M. Asif Khan, Qhalid Fareed | 2018-05-29 |
| 9882039 | Fabrication technique for high frequency, high power group III nitride electronic devices | M. Asif Khan | 2018-01-30 |
| 9859457 | Semiconductor and template for growing semiconductors | Asif Khan, Iftikhar Ahmad, Bin Zhang, Alexander Lunev | 2018-01-02 |
| 9543425 | Multi-finger large periphery AlInN/AlN/GaN metal-oxide-semiconductor heterostructure field effect transistors on sapphire substrate | Asif Khan | 2017-01-10 |
| 9343544 | Multi-finger large periphery AlInN/AlN/GaN metal-oxide-semiconductor heterostructure field effect transistors on sapphire substrate | Asif Khan | 2016-05-17 |
| 9343563 | Selectively area regrown III-nitride high electron mobility transistor | Asif Khan, Qhalid Fareed | 2016-05-17 |
| 9331240 | Utlraviolet light emitting devices and methods of fabrication | M. Asif Khan, Qhalid Fareed | 2016-05-03 |
| 9142714 | High power ultraviolet light emitting diode with superlattice | Qhalid Fareed, Asif Khan | 2015-09-22 |
| 9059081 | Selectively doped semi-conductors and methods of making the same | Asif Khan | 2015-06-16 |
| 8796097 | Selectively area regrown III-nitride high electron mobility transistor | Asif Khan, Qhalid Fareed | 2014-08-05 |
| 8698191 | Ultraviolet light emitting diode with AC voltage operation | Asif Khan, Qhalid Fareed | 2014-04-15 |
| 8692293 | Method to increase breakdown voltage of semiconductor devices | M. Asif Khan, Qhalid Fareed, Grigory Simin, Naveen Tipimeni | 2014-04-08 |
| 8680551 | High power ultraviolet light sources and method of fabricating the same | Qhalid Fareed, Asif Khan | 2014-03-25 |
| 8541817 | Multilayer barrier III-nitride transistor for high voltage electronics | Qhalid Fareed, Asif Khan | 2013-09-24 |
| 8507941 | Ultraviolet light emitting diode with AC voltage operation | Asif Khan, Qhalid Fareed | 2013-08-13 |
| 8476125 | Fabrication technique for high frequency, high power group III nitride electronic devices | M. Asif Khan | 2013-07-02 |
| 8415654 | Low resistance ultraviolet light emitting device and method of fabricating the same | Asif Khan, Qhalid Fareed | 2013-04-09 |
| 8372697 | Digital oxide deposition of SiO2 layers on wafers | Asif Khan | 2013-02-12 |
| 8354687 | Efficient thermal management and packaging for group III nitride based UV devices | Asif Khan, Qhalid Fareed | 2013-01-15 |
| 8354663 | Micro-pixel ultraviolet light emitting diode | Asif Khan, Rubina Khan | 2013-01-15 |
| 8338273 | Pulsed selective area lateral epitaxy for growth of III-nitride materials over non-polar and semi-polar substrates | M. Asif Khan | 2012-12-25 |
| 8318562 | Method to increase breakdown voltage of semiconductor devices | M. Asif Khan, Qhalid Fareed, Grigory Simin, Naveen Tipirneni | 2012-11-27 |