Issued Patents All Time
Showing 26–44 of 44 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9276075 | Semiconductor device having vertical MOSFET structure that utilizes a trench-type gate electrode and method of producing the same | Hidefumi Takaya, Hideo Matsuki, Naohiro Suzuki, Tsuyoshi Ishikawa, Yukihiko Watanabe | 2016-03-01 |
| 9257501 | Semiconductor device | Hidefumi Takaya, Masaru Nagao | 2016-02-09 |
| 9201094 | Wafer examination device and wafer examination method | Hirokazu Fujiwara | 2015-12-01 |
| 9184271 | III-V HEMT devices | Masahiro Sugimoto, Tetsu Kachi, Yoshitaka Nakano, Tsutomu Uesugi, Hiroyuki Ueda | 2015-11-10 |
| 9142411 | Method for producing semiconductor device | Masatoshi TSUJIMURA, Hirokazu Fujiwara, Tomoo MORINO | 2015-09-22 |
| 9136372 | Silicon carbide semiconductor device | Shinichiro Miyahara, Masahiro Sugimoto, Hidefumi Takaya, Yukihiko Watanabe, Tsuyoshi Ishikawa | 2015-09-15 |
| 8975139 | Manufacturing method of silicon carbide semiconductor device | Shinichiro Miyahara, Toshimasa Yamamoto, Hidefumi Takaya, Masahiro Sugimoto, Yukihiko Watanabe +1 more | 2015-03-10 |
| 8878290 | Semiconductor device | Hidefumi Takaya | 2014-11-04 |
| 8748975 | Switching element and manufacturing method thereof | Hirokazu Fujiwara, Yukihiko Watanabe, Toshimasa Yamamoto, Yuichi Takeuchi | 2014-06-10 |
| 8710586 | SIC semiconductor device and method for manufacturing the same | Toshimasa Yamamoto, Masahiro Sugimoto, Hidefumi Takaya, Jun Morimoto, Tsuyoshi Ishikawa +1 more | 2014-04-29 |
| 8618555 | Silicon carbide semiconductor device and method of manufacturing the same | Naohiro Suzuki, Hideo Matsuki, Masahiro Sugimoto, Hidefumi Takaya, Jun Morimoto +2 more | 2013-12-31 |
| 8575689 | Silicon carbide semiconductor device and manufacturing method of the same | Tomohiro Mimura, Shinichiro Miyahara, Hidefumi Takaya, Masahiro Sugimoto, Tsuyoshi Ishikawa +1 more | 2013-11-05 |
| 8525223 | Silicon carbide semiconductor device | Hiroki Watanabe, Shinichiro Miyahara, Masahiro Sugimoto, Hidefumi Takaya, Yukihiko Watanabe +1 more | 2013-09-03 |
| 8518809 | Manufacturing method of silicon carbide single crystal | Hiroki Watanabe, Yasuo Kitou, Yasushi Furukawa, Kensaku Yamamoto, Hidefumi Takaya +3 more | 2013-08-27 |
| 8492867 | Semiconductor device including cell region and peripheral region having high breakdown voltage structure | Kensaku Yamamoto, Naohiro Suzuki, Hidefumi Takaya, Masahiro Sugimoto, Jun Morimoto +2 more | 2013-07-23 |
| 8440524 | Semiconductor device manufacturing method | Hirokazu Fujiwara, Masaki Konishi, Jun Kawai, Takeo Yamamoto, Takeshi Endo +2 more | 2013-05-14 |
| 8008749 | Semiconductor device having vertical electrodes structure | Masahiro Sugimoto, Tsutomu Uesugi, Hiroyuki Ueda, Tetsu Kachi | 2011-08-30 |
| 7800130 | Semiconductor devices | Masahiro Sugimoto, Tetsu Kachi, Tsutomu Uesugi, Hiroyuki Ueda | 2010-09-21 |
| 7777252 | III-V hemt devices | Masahiro Sugimoto, Tetsu Kachi, Yoshitaka Nakano, Tsutomu Uesugi, Hiroyuki Ueda | 2010-08-17 |