Issued Patents All Time
Showing 25 most recent of 53 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12324187 | Switching element | Jun Saito, Keita KATAOKA, Yusuke Yamashita, Katsuhiro Kutsuki, Yasushi Urakami | 2025-06-03 |
| 12205983 | Semiconductor device and manufacturing method of semiconductor device | Hidefumi Takaya, Yuichi Takeuchi | 2025-01-21 |
| 12205984 | Semiconductor device with surface and deep guard rings | Jun Saito, Keita KATAOKA, Yusuke Yamashita, Katsuhiro Kutsuki, Youngshin Eum | 2025-01-21 |
| 11387326 | Silicon carbide semiconductor device and method for manufacturing the same | Kentarou Okumura, Hidekazu Odake, Hajime Tsukahara | 2022-07-12 |
| 11233147 | Semiconductor device | Masato NOBORIO, Jun Saito | 2022-01-25 |
| 10784335 | Silicon carbide semiconductor device and manufacturing method therefor | Yuichi Takeuchi, Shinichiro Miyahara, Atsuya Akiba, Katsumi Suzuki | 2020-09-22 |
| 10770579 | SiC-MOSFET and method of manufacturing the same | Hidefumi Takaya, Yasushi Urakami | 2020-09-08 |
| 10734515 | Silicon carbide semiconductor device and manufacturing method therefor | Yuichi Takeuchi, Katsumi Suzuki | 2020-08-04 |
| 10720493 | Silicon carbide semiconductor device and manufacturing method therefor | Yuichi Takeuchi, Katsumi Suzuki | 2020-07-21 |
| 10516046 | Silicon carbide semiconductor device | Yuichi Takeuchi, Yu Suzuki, Masahiro Sugimoto | 2019-12-24 |
| 10446649 | Silicon carbide semiconductor device | Tomoo MORINO, Shoji Mizuno, Yuichi Takeuchi, Akitaka Soeno | 2019-10-15 |
| 10170470 | Switching device | Toru Onishi, Katsuhiro Kutsuki, Yasushi Urakami | 2019-01-01 |
| 10153350 | Semiconductor device | Jun Saito, Tatsuji Nagaoka, Sachiko Aoi, Shinichiro Miyahara, Takashi Kanemura | 2018-12-11 |
| 10153345 | Insulated gate switching device and method for manufacturing the same | Hidefumi Takaya, Shoji Mizuno, Sachiko Aoi | 2018-12-11 |
| 10020390 | Semiconductor device and semiconductor device manufacturing method | Jun Saito, Hirokazu Fujiwara, Tomoharu Ikeda, Toshimasa Yamamoto | 2018-07-10 |
| 9911803 | Semiconductor device | Jun Saito, Sachiko Aoi, Toshimasa Yamamoto | 2018-03-06 |
| 9905686 | Insulated gate bipolar transistor with improved on/off resistance | Masahiro Sugimoto, Shinichiro Miyahara | 2018-02-27 |
| 9865723 | Switching device | Masahiro Sugimoto | 2018-01-09 |
| 9853141 | Semiconductor device with front and rear surface electrodes on a substrate having element and circumferential regions, an insulating gate type switching element in the element region being configured to switch between the front and rear surface electrodes | Jun Saito, Hirokazu Fujiwara, Tomoharu Ikeda, Toshimasa Yamamoto | 2017-12-26 |
| 9825123 | Schottky barrier diode and method for manufacturing the same | Tatsuji Nagaoka, Hiroki Miyake, Sachiko Aoi, Atsuya Akiba | 2017-11-21 |
| 9818860 | Silicon carbide semiconductor device and method for producing the same | Yuichi Takeuchi, Naohiro Suzuki, Masahiro Sugimoto, Hidefumi Takaya, Akitaka Soeno +2 more | 2017-11-14 |
| 9793376 | Silicon carbide semiconductor device and method of manufacturing the same | Shinichiro Miyahara, Toshimasa Yamamoto, Jun Morimoto, Narumasa Soejima | 2017-10-17 |
| 9780205 | Insulated gate type semiconductor device having floating regions at bottom of trenches in cell region and circumferential region and manufacturing method thereof | Jun Saito, Hirokazu Fujiwara, Tomoharu Ikeda, Toshimasa Yamamoto | 2017-10-03 |
| 9673288 | Silicon carbide semiconductor device including conductivity layer in trench | Yuichi Takeuchi, Kazumi Chida, Narumasa Soejima | 2017-06-06 |
| 9660046 | Method of manufacturing semiconductor device | Sachiko Aoi, Katsumi Suzuki, Shoji Mizuno | 2017-05-23 |