Issued Patents All Time
Showing 51–65 of 65 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6063655 | Junction high electron mobility transistor-heterojunction bipolar transistor (JHEMT-HBT) monolithic microwave integrated circuit (MMIC) and single growth method of fabrication | Jeffrey B. Shealy | 2000-05-16 |
| 6043519 | Junction high electron mobility transistor-heterojunction bipolar transistor (JHEMT-HBT) monolithic microwave integrated circuit (MMIC) and single growth method of fabrication | Jeffrey B. Shealy | 2000-03-28 |
| 5854086 | Method for manufacturing planar field effect transistors and planar high electron mobility transistors | Jeffrey B. Shealy | 1998-12-29 |
| 5835128 | Wireless redistribution of television signals in a multiple dwelling unit | Perry A. Macdonald, Lawrence E. Larson, Jeffrey B. Shealy, Michael Case | 1998-11-10 |
| 5757074 | Microwave/millimeter wave circuit structure with discrete flip-chip mounted elements | Perry A. Macdonald, David B. Rensch, Lawrence E. Larson | 1998-05-26 |
| 5721161 | Method of making high-speed, low-noise millimeterwave HEMT and pseudormorphic HEMT | Chanh Nguyen, Takyiu Liu | 1998-02-24 |
| 5663583 | Low-noise and power ALGaPSb/GaInAs HEMTs and pseudomorpohic HEMTs on GaAs substrate | Takyiu Liu, Chanh Nguyen | 1997-09-02 |
| 5646069 | Fabrication process for Al.sub.x In.sub.1-x As/Ga.sub.y In.sub.1-y As power HFET ohmic contacts | Linda M. Jelloian, Loi D. Nguyen, Adele Schmitz | 1997-07-08 |
| 5629241 | Microwave/millimeter wave circuit structure with discrete flip-chip mounted elements, and method of fabricating the same | Perry A. Macdonald, David B. Rensch, Lawrence E. Larson | 1997-05-13 |
| 5623235 | Wide-bandwidth variable attenuator/modulator using giant magnetoristance technology | Mark Lui | 1997-04-22 |
| 5612551 | AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications | Takyiu Liu, Chanh Nguyen | 1997-03-18 |
| 5610086 | Method of making an AlPSb/InP single heterojunction bipolar transistor on InP substrate for high-speed, high-power applications | Takyiu Liu, Chanh Nguyen | 1997-03-11 |
| 5603765 | Method of growing high breakdown voltage allnas layers in InP devices by low temperature molecular beam epitaxy | Linda M. Jelloian, Mark Lui, Takyiu Liu | 1997-02-18 |
| 5548140 | High-Speed, low-noise millimeterwave hemt and pseudomorphic hemt | Chanh Nguyen, Takyiu Liu | 1996-08-20 |
| 5528209 | Monolithic microwave integrated circuit and method | Perry A. Macdonald, Lawrence E. Larson, Michael Case, Mary Y. Chen, David B. Rensch | 1996-06-18 |