Issued Patents All Time
Showing 1–10 of 10 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11532922 | III-nitride surface-emitting laser and method of fabrication | Charles Forman, SeungGeun Lee, Jared Kearns, Steven P. DenBaars, James S. Speck +1 more | 2022-12-20 |
| 11411137 | III-nitride light emitting diodes with tunnel junctions wafer bonded to a conductive oxide and having optically pumped layers | Asad J. Mughal, Stacy J. Kowsz, Robert M. Farrell, Benjamin P. Yonkee, Christopher Pynn +4 more | 2022-08-09 |
| 11348908 | Contact architectures for tunnel junction devices | Benjamin P. Yonkee, James S. Speck, Steven P. DenBaars, Shuji Nakamura | 2022-05-31 |
| 11217722 | Hybrid growth method for III-nitride tunnel junction devices | Benjamin P. Yonkee, John T. Leonard, Tal Margalith, James S. Speck, Steven P. DenBaars +1 more | 2022-01-04 |
| 11164997 | III-nitride tunnel junction light emitting diode with wall plug efficiency of over seventy percent | Benjamin P. Yonkee, James S. Speck, Steven P. DenBaars, Shuji Nakamura | 2021-11-02 |
| 10985285 | Methods for fabricating III-nitride tunnel junction devices | Benjamin P. Yonkee, Asad J. Mughal, David Hwang, James S. Speck, Steven P. DenBaars +1 more | 2021-04-20 |
| 10685835 | III-nitride tunnel junction with modified P-N interface | Benjamin P. Yonkee, John T. Leonard, Tal Margalith, James S. Speck, Steven P. DenBaars +1 more | 2020-06-16 |
| 9159553 | Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface | Hiroaki Ohta, Feng Wu, Anurag Tyagi, Arpan Chakraborty, James S. Speck +2 more | 2015-10-13 |
| 8866126 | Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations | Hiroaki Ohta, Feng Wu, Anurag Tyagi, Arpan Chakraborty, James S. Speck +2 more | 2014-10-21 |
| 8481991 | Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations | Hiroaki Ohta, Feng Wu, Anurag Tyagi, Arpan Chakraborty, James S. Speck +2 more | 2013-07-09 |